Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1531227
Reference20 articles.
1. Comprehensive characterization of hydride VPE grown GaN layers and templates
2. Mechanism of Yellow Luminescence in GaN
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4. Observation of Native Ga Vacancies in GaN by Positron Annihilation
5. Gallium vacancies and the yellow luminescence in GaN
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