Discussion of the validity of Kuno’s relation to determine the base lifetime from a reverse recovery experiment
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333074
Reference8 articles.
1. Analysis and characterization of P-N junction diode switching
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3. Effect of emitter recombinations on the open circuit voltage decay of a junction diode
4. Theory and experiments on open circuit voltage decay ofp‐njunction diodes with arbitrary base width, including the effects of built‐in drift field in the base and recombinations in the emitter
5. Measurement of minority carrier lifetime in solar cells from photo-induced open-circuit voltage decay
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1. Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods;IEEE Transactions on Electron Devices;2023-08
2. Bandgap Narrowing and Its Effects on the Properties of Moderately and Heavily Doped Germanium and Silicon;Advances in Electronics and Electron Physics Volume 82;1991
3. Rigorous analysis of the reverse recovery process in junction diodes allowing for arbitrary widths of the base and the emitter as well as heavy doping effects;Solid-State Electronics;1990-02
4. Characterization of reverse recovery transient behavior of bipolar transistors for emitter parameters determination;Solid-State Electronics;1988-11
5. Lifetime determination in p/n junction diodes and solar cells from open-circuit-voltage decay including junction capacitance effects;Solid-State Electronics;1987-04
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