Kinetics of self‐interstitials generated at the Si/SiO2interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93814
Reference16 articles.
1. The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon
2. Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview
3. Oxidation‐Induced Point Defects in Silicon
4. Kinetics of growth of the oxidation stacking faults
5. Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°K
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