P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process-Reference-Cited by-同舟云学术

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P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

Published:2012-09-10 Issue:11 Volume:101 Page:112101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Myers M. A.¹,Myers M. T.²,General M. J.²,Lee J. H.³,Shao L.²³,Wang H.¹³

Affiliation:

1. Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA

2. Department of Nuclear Engineering, Texas A&M University, College Station, Texas 77843, USA

3. Materials Science and Engineering Program, Texas A&M University, College Station, Texas 77843, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference35 articles.

1. Zinc Oxide Bulk, Thin Films and Nanostructures, edited by C. Jagadish and S. Pearton (Elsevier, Amsterdam, 2006).

2. Effects of 120keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film

3. Thermal stability of ion-implanted ZnO

4. Properties of nitrogen implanted and electron beam annealed bulk ZnO

5. Sol–gel derived N-doped ZnO thin films

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1. P-Type ZnO Films Made by Atomic Layer Deposition and Ion Implantation;Nanomaterials;2024-06-22

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3. Investigation of highly efficient self-powered photo-detector performance of all inorganic lead-free halide perovskites (CsSnCl3) nanocrystals (NCs) decorated Er: ZnO nanowires (NWs)/Si heterojunctions;Optical Materials;2024-01

4. ZnO with p-Type Doping: Recent Approaches and Applications;ACS Applied Electronic Materials;2023-08-07

5. Site disorder and its tailoring in N implanted post-annealed ZnO: Prospects and problems;Materials Science in Semiconductor Processing;2021-11

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