Effect of residual stress on the ferroelectric property of (Pb0.90La0.10)Ti0.975O3 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3079510
Reference12 articles.
1. Ferroelectric Memories
2. The Physics of Ferroelectric Memories
3. Growth and properties of (Pb0.90La0.10)TiO3 thick films prepared by RF magnetron sputtering with a PbO buffer layer
4. Microwave characterization of (Pb,La)TiO3 thin films integrated on ZrO2∕SiO2∕Si wafers by sol-gel techniques
5. Effect of the PbOx thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Domain evolution of tetragonal Pb(ZrxTi1−x) O3 piezoelectric thin films on SrTiO3 (100) surfaces: combined effects of misfit strain and Zr/Ti ratio;J. Mater. Chem. C;2014
2. THICKNESS-DEPENDENCE OF RESIDUAL STRESS IN LEAD-FREE FERROELECTRIC K0.5Na0.5NbO3 FILMS;Journal of Advanced Dielectrics;2012-10
3. Temperature field and residual stress analysis of multilayer pyroelectric thin film;Ceramics International;2012-03
4. X-ray diffraction stress analysis of ferroelectric thin films with ideal (hkl) textures considering the piezoelectric coupling effect;Physica B: Condensed Matter;2010-02
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