Epitaxial growth of nonpolar AlN films on ZnO substrates using room temperature grown GaN buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2775035
Reference23 articles.
1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
2. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
3. Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates
4. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
5. Near-bandedge cathodoluminescence of an AlN homoepitaxial film
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1. Improved performance of near UV-blue n-ZnO/p-GaN heterostructure LED with an AlN electron blocking layer;Microelectronic Engineering;2022-06
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3. Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions;Japanese Journal of Applied Physics;2020-01-27
4. Enhanced SAW characteristics of a-plane AlN epitaxial films using ZnO buffer layer;Journal of Materials Science: Materials in Electronics;2017-11-28
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