Subpicosecond timescale carrier dynamics in GaInAsSb∕AlGaAsSb double quantum wells emitting at 2.3μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2894586
Reference17 articles.
1. Very-Low-Threshold 2.4-<tex>$muhboxm$</tex>GaInAsSb–AlGaAsSb Laser Diodes Operating at Room Temperature in the Continuous-Wave Regime
2. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
3. Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with > 2.5 µm
4. High power 2.4μm heavily strained type-I quantum well GaSb-based diode lasers with more than 1W of continuous wave output power and a maximum power-conversion efficiency of 17.5%
5. Auger recombination in InAs, GaSb, InP, and GaAs
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