Influence of mobility fluctuations on random telegraph signal amplitude in n-channel metal–oxide–semiconductor field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366200
Reference26 articles.
1. Effect of electron heating on electron capture cross section in very small metal‐oxide‐semiconductor transistors
2. Random telegraph noise of deep-submicrometer MOSFETs
3. Single electron switching events in nanometer-scale Si MOSFET's
4. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
5. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
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1. Oxide Trap-Induced RTS in MOSFETs;Noise in Nanoscale Semiconductor Devices;2020
2. A Stand-Alone, Physics-Based, Measurement-Driven Model and Simulation Tool for Random Telegraph Signals Originating From Experimentally Identified MOS Gate-Oxide Defects;IEEE Transactions on Electron Devices;2016-04
3. Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors;Solid-State Electronics;2015-09
4. A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors;IEEE Transactions on Electron Devices;2008-03
5. Novel analytical and numerical approach to modeling low-frequency noise in semiconductor devices;Physica A: Statistical Mechanics and its Applications;2006-04
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