High quality Fe‐doped semi‐insulating InP epitaxial layers grown by low‐pressure organometallic vapor phase epitaxy using tertiarybutylphosphine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104962
Reference9 articles.
1. Semi-insulating InP grown by low pressure MOCVD
2. Planar‐embedded InGaAsP/InP heterostructure laser with a semi‐insulating InP current‐blocking layer grown by metalorganic chemical vapor deposition
3. High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers
4. Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPx
5. Characterization of InP grown by OMVPE using trimethylindium and tertiarybutylphosphine (TBP) at low V/III ratios and reduced TBP partial pressures
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. MOVPE growth of Al-free 808nm high power lasers using TBP and TBA in pure N2 ambient;Journal of Crystal Growth;2006-02
2. 650-nm AlGaInP multiple-quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine;Applied Physics Letters;2003-07-28
3. High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers;Journal of Crystal Growth;2003-06
4. Growth of Undoped Indium Phosphide by OMVPE in an Inverted‐Vertical Reactor Using Trimethylindium and Tertiarybutylphosphine and Phosphine;Journal of The Electrochemical Society;1993-11-01
5. Chemical beam epitaxy of high purity InP using tertiarybutylphosphine and 1,2 bis-phosphinoethane;Materials Science and Engineering: B;1993-11
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