Advance anti-PVT-variation low-power time-to-digital converter design using 90-Nm CMOS process

Author:

Kumar M. Dileep,Kumar T. Siva,Ramaiah G. N. Kodanda

Publisher

AIP Publishing

Reference12 articles.

1. M. Bazes, Output buffer impedance control and noise reduction using a speed-loc ked loop, in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, (2004), pp. 486–541

2. C.-L. Chen, H.-Y. Tseng, R.-C. Kuo, C.-C. Wang, On-chip MOS PVT variation monitor for slew rate self-adjusting 2×VDD output buffers, in Proc. Int. Conf. on IC Design and Technology (ICICDT), (2012), p. 14

3. S.Henzler, et.al., “90nm 4.7ps-Resolution 0.7-LSB Single-Shot Precision and 19pJ-per-Shot Local Passive Interpolation Time-to-Digital Converter with On-Chip Characterization”, ISSCC (Feb. 2008).

4. R.B. Staszewski, et.al., “1.3V 20p Time-to-Digital Converter for Frequency Synthesis in 90-nm CMOS”, IEEE Trans. CAS II (Mar.2006).

5. M. Lee, A. Abidi, “A 9b, 1.25ps Resolution Coarse-Fine Timeto-Digital Converter in 90nm CMOS that Amplifies a Time Residue,” in VLSI Circuits Symposium, pp. 168–169, Jun. 2007.

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