The effect of threading dislocations, Mg doping, and etching on the spectral responsivity in GaN-based ultraviolet detectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371407
Reference24 articles.
1. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
2. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
3. Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
4. Low noisep-π-nGaN ultraviolet photodetectors
5. Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity
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3. Top- and bottom-illumination of solar-blind AlGaN metal-semiconductor-metal photodetectors;physica status solidi (a);2015-01-20
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5. GaN MSM Ultraviolet Photodetectors with Transparent and Thermally Stable RuO[sub 2] and IrO[sub 2] Schottky Contacts;Journal of The Electrochemical Society;2004
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