Doping and damage dose dependence of implant induced transient enhanced diffusion below the amorphization threshold
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110852
Reference8 articles.
1. Transient diffusion of low‐concentration B in Si due to29Si implantation damage
2. Temperature and Time Dependence of Dopant Enhanced Diffusion in Self‐Ion Implanted Silicon
3. Theory of dopant diffusion assuming nondilute concentrations of dopant‐defect pairs
4. On models of phosphorus diffusion in silicon
5. Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon
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1. Modeling Process and Device Behavior of Josephson Junctions in Superconductor Electronics With TCAD;IEEE Transactions on Electron Devices;2021-11
2. Effect of Arsenic on Extended Defect Evolution in Silicon;MRS Proceedings;2001
3. Effects of donor concentration on transient enhanced diffusion of boron in silicon;Journal of Applied Physics;2000-04-15
4. Dose, Energy, and Ion Species Dependence of the Effective Plus Factor for Transient Enhanced Diffusion;Journal of The Electrochemical Society;2000
5. Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient;Journal of The Electrochemical Society;1999-07-01
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