Electrical properties of distributed electron cyclotron resonance plasma‐deposited SiO2‐InP diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105252
Reference6 articles.
1. High-power InP MISFETs
2. An InP MISFET with a power density of 1.8 W/mm at 30 GHz
3. Fowler‐Nordheim Tunneling into Thermally Grown SiO2
4. Low‐temperature deposition of high‐quality silicon dioxide by plasma‐enhanced chemical vapor deposition
5. Electronic and microstructural properties of disorder-induced gap states at compound semiconductor–insulator interfaces
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1. Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering;Japanese Journal of Applied Physics;2005-01-11
2. Optimization and Interface Characterization of a Novel Oxide-Free Insulated Gate Structure for InP Having an Ultrathin Silicon Interface Control Layer;Japanese Journal of Applied Physics;2002-02-28
3. Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well;Japanese Journal of Applied Physics;2000-04-30
4. Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal–insulator–semiconductor structures fabrication;Journal of Applied Physics;1999-12-15
5. Deposition of sol-gel-derived inorganic and composite material films on InP for integrated optics;SPIE Proceedings;1999-11-12
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