Dynamics of photoexcited carriers in micron‐size InP‐InGaAsP etched microstructures probed by picosecond photoluminescence spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100285
Reference15 articles.
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3. A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
4. Optical measurement of surface recombination in InGaAs quantum well mesa structures
5. Ultrafast luminescence spectroscopy using sum frequency generation
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1. Subduing surface recombination for continuous-wave operation of photonic crystal nanolasers integrated on Silicon waveguides;Optics Express;2015-10-15
2. Pattern transfer and photoluminescence damage assessment of deep-submicrometer features etched by photon-induced cryoetching;Applied Physics A Materials Science & Processing;1996-08
3. Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases;Applied Physics Letters;1995-12-25
4. Radiative recombination in GaAs‐AlxGa1−xAs quantum dots;Applied Physics Letters;1992-08-24
5. Luminescence and Raman Scattering Studies of Ga-As-AlGaAs Quantum Dots;Low-Dimensional Electronic Systems;1992
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