Effect of ionization rates on dynamic recovery processes during electron-beam irradiation of 6H-SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2715135
Reference19 articles.
1. Silicon carbide (SiC)—Recent results in physics and in technology
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5. J. Bentley, Report No. ORNL/CP-96799 (National Technical Information Service, Springfield, VA, 1998).
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