Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372062
Reference21 articles.
1. Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
2. High quality ultrathin InAs/GaAs quantum wells grown by standard and low‐temperature modulated‐fluxes molecular beam epitaxy
3. Effects of growth temperature on highly mismatched InAs grown on GaAs substrates by MBE
4. Effects of Dislocations on Mobilities in Semiconductors
5. Dislocation scattering effects on electron mobility in InAsSb
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