Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure-Reference-Cited by-同舟云学术

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Published:2015-08-17 Issue:7 Volume:107 Page:072901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wei Zhou Li¹,Long Shao Xing²,Yuan Li Xiang¹^ORCID,Jiang Hao¹,Chen Ran¹,Jean Yoon Kyung²,Jin Kim Hae²,Zhang Kailiang¹,Zhao Jinshi¹,Seong Hwang Cheol²

Affiliation:

1. School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, China

2. Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, South Korea

Funder

National Research Foundation of Korea (NRF)

Natural Science Foundation of Tianjin City (Natural Science Foundation of Tianjin)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4928710

Reference22 articles.

1. Electrochemical metallization memories—fundamentals, applications, prospects

2. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance