Local investigation of recombination at grain boundaries in silicon by grain boundary‐electron beam induced current
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354917
Reference20 articles.
1. On the origin of the electrical activity in silicon grain boundaries
2. Electronic properties of grain boundaries in semiconductors
3. Grain boundaries in semiconductors
4. Influence of illumination on the grain boundary recombination velocity in silicon
5. Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells
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