Nucleation and growth of TiSi2 thin films deposited on glass by atmospheric pressure chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2472274
Reference14 articles.
1. Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications
2. Silicides and ohmic contacts
3. Optimization of selective TiSi2 chemical vapor deposition by mechanistic chemical kinetics
4. Selective Titanium Silicide Chemical Vapor Deposition with Surface Cleaning by Silane and Ohmic Contact Formation to Very Shallow Junctions
5. Reduction of the C49→C54 phase transformation temperature in co-sputtered TiSi2 thin films by ternary alloying
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2. Formation of Pb0.6Sr0.4(Ti0.97Mg0.03)O2.97 thin films on assembled bottom electrodes with titanium silicide nanowires;Vacuum;2014-09
3. Recent Progress in Titanium Silicide Nanowires: Properties, Preparations and Applications;Applied Mechanics and Materials;2013-11
4. Development of CVD Ti-containing films;Progress in Materials Science;2013-10
5. Influence of Substrates on the Formation of the TiSi Nanowire by Atmosphere Pressure Chemical Vapor Deposition;Journal of Nanoscience and Nanotechnology;2011-12-01
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