Voltage-controlled three-state magnetic memory based on anisotropic magnetoresistance in a multiferroic heterostructure-Reference-Cited by-同舟云学术

Voltage-controlled three-state magnetic memory based on anisotropic magnetoresistance in a multiferroic heterostructure

Published:2020-04-13 Issue:15 Volume:116 Page:152401
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Mengli¹,Du Wei¹,Su Hua¹^ORCID,Liu Bo²,Meng Hao²,Tang XiaoLi¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China

2. Key Laboratory of Spintronics Materials, Devices and Systems of Zhejiang Province, Hangzhou 311305, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0005804

Reference38 articles.

1. Spintronics: A Spin-Based Electronics Vision for the Future

2. Electric Field Manipulated Multilevel Magnetic States Storage in FePt/(011) PMN-PT Heterostructure

3. Voltage-impulse-induced dual-range nonvolatile magnetization modulation in metglas/PZT heterostructure

4. The emergence of spin electronics in data storage

5. Spintronics based random access memory: a review

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