Spontaneous recombination current in InGaAs/GaAs quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103370
Reference12 articles.
1. Strained‐layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency
2. High-power 0.98μm GaInAs strained quantum well lasers for Er3+-doped fibre amplifier
3. Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser
4. Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy
5. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
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1. Principles of semiconductor lasers;Semiconductor Lasers;2013
2. Analysis of the mechanisms for impaired high-temperature high-speed performance of 1.3-μm InGaAsP lasers;SPIE Proceedings;2000-07-14
3. Longitudinal carrier density profiling in semiconductor lasers via spectral analysis of side spontaneous emission;Journal of Applied Physics;1996-08
4. Profiling of carrier density in semiconductor lasers via spectral analysis of side spontaneous emission;Conference on Lasers and Electro-Optics Europe;1996
5. The Role of Spontaneous Emission in Laser Diode Operation;Devices Based on Low-Dimensional Semiconductor Structures;1996
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