Solution-processed high-mobility neodymium-substituted indium oxide thin-film transistors formed by facile patterning based on aqueous precursors
Author:
Affiliation:
1. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4979318
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