Low-resistivity, p-type SiC layers produced by Al implantation and ion-beam-induced crystallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1490145
Reference17 articles.
1. Ion Implantation and Annealing Effects in Silicon Carbide
2. p-Type doping of SiC by high dose Al implantation—problems and progress
3. Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation
4. Activation of aluminum implanted at high doses in 4H–SiC
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1. Temperature dependence of irradiation-induced nanocrystallization in amorphous silicon carbide;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-11
2. The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition;Journal of Crystal Growth;2013-10
3. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition;Materials Science Forum;2013-01
4. Effect of annealing process on the surface roughness in multiple Al implanted 4H-SiC;Journal of Semiconductors;2011-07
5. Aluminum induced in situ crystallization of amorphous SiC;Applied Physics Letters;2009-05-04
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