TiWOx interfacial layer for current reduction and cyclability enhancement of phase change memory-Reference-Cited by-同舟云学术

TiWOx interfacial layer for current reduction and cyclability enhancement of phase change memory

Published:2012-08-13 Issue:7 Volume:101 Page:073502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Minghua¹,Zhao Rong¹,Law Leong Tat¹,Lim Kian Guan¹,Shi Luping¹

Affiliation:

1. Data Storage Institute, (A*STAR) Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608, Singapore

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference13 articles.

1. Y. Matsui, K. Kurotsuchi, O. Tonomura, T. Morikawa, M. Kinoshita, Y. Fujisaki, N. Matsuzski, S. Hanzawa, M. Terao, N. Takaura, H. Moriya, T. Iwasaki, M. Moniwa, and T. Koga, in IEEE Proceedings of International Electron Devices Meeting, 2006, San Francisco, USA.

2. Phase change random access memory featuring silicide metal contact and high-κ interlayer for operation power reduction

3. Multilevel Storage in Lateral Top-Heater Phase-Change Memory

4. Polycrystalline silicon-germanium heating layer for phase-change memory applications

5. Effect of thermal annealing on microstructural properties of Ti/Ge2Sb2Te5/Ti thin films deposited on SiO2/Si substrates by a sputtering method

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