Stress-induced leakage current and trap generation in HfO2 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4756993
Reference39 articles.
1. Dielectric breakdown mechanisms in gate oxides
2. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
3. Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics
4. Electron transport through broken down ultra-thin SiO2 layers in MOS devices
5. Direct visualization and in-depth physical study of metal filament formation in percolated high-κ dielectrics
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