The enhanced low resistance contacts and boosted mobility in two-dimensional p-type WSe2 transistors through Ar+ ion-beam generated surface defects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4966049
Reference33 articles.
1. Single-layer MoS2 transistors
2. High-mobility field-effect transistors based on transition metal dichalcogenides
3. Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors
4. Advances in MoS2-Based Field Effect Transistors (FETs)
5. WSe2 field effect transistors with enhanced ambipolar characteristics
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