Effect of ionized donors on the electron and hole densities of states in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332159
Reference14 articles.
1. Effect of donor impurities on the conduction and valence bands of silicon
2. Effect of donor impurities on the density of states near the band edge in silicon
3. Energy gap in Si and Ge: Impurity dependence
4. Infrared Absorption in Heavily Doped n-Type Si
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Bandgap Narrowing and Its Effects on the Properties of Moderately and Heavily Doped Germanium and Silicon;Advances in Electronics and Electron Physics Volume 82;1991
2. The luminescence lineshape of highly doped direct-gap III-V compounds;Journal of Physics C: Solid State Physics;1988-05-30
3. High dopant and carrier concentration effects in gallium arsenide: Band structure and effective intrinsic carrier concentrations;Journal of Applied Physics;1986-10-15
4. Band structure and density of states changes in heavily doped silicon;Journal of Applied Physics;1986-04-15
5. Impurity bands and band tailing in moderately doped silicon;Journal of Applied Physics;1986-03-15
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