Ohmic contacts ton‐type GaAs using high‐temperature rapid thermal annealing for self‐aligned processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97903
Reference11 articles.
1. Characteristics of sub-half-micrometre-gate self-aligned GaAs FET by ion implantation
2. Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method
3. Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs
4. GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter process
5. Rapid Thermal Annealing in GaAs IC Processing
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1. Thermal Annealing Effects on I-V-T Characteristics of Pd/Ge/Ti/Pt/Au-Si-Gaas Contact at High Temperatures;SSRN Electronic Journal;2022
2. Metals on Semiconductors;Surfaces and Interfaces of Electronic Materials;2012-12-28
3. Microstructural and electrical investigations of Pd/Ge/Ti/Au ohmic contact ton‐type GaAs;Journal of Applied Physics;1996-10
4. Reliability issues for III-V heterojunction bipolar transistors;Microelectronics Reliability;1995-04
5. Refractory metal-based low-resistance ohmic contacts for submicron GaAs heterostructure devices;Thin Solid Films;1995-02
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