Intrinsic carrier capture time in deep-etched quantum-box (70 nm diameter) lasers at low temperature: An indication of extremely high quantum capture efficiency-Reference-Cited by-同舟云学术

Intrinsic carrier capture time in deep-etched quantum-box (70 nm diameter) lasers at low temperature: An indication of extremely high quantum capture efficiency

Published:1997-03-03 Issue:9 Volume:70 Page:1152-1154
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Jian,Griesinger Uwe A.,Schweizer Heinz

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.118510

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3. Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)

4. Room-temperature operation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers

5. Realization of dot DFB lasers

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1. Carrier and light trapping in graded quantum-well laser structures;Applied Physics Letters;2000-06-12

2. Quantum Dot Lasers;Frontiers of Nano-Optoelectronic Systems;2000

3. The present status of quantum dot lasers;Physica E: Low-dimensional Systems and Nanostructures;1999-12

4. Threshold current of quantum-disk and quantum-wire gain-coupled distributed feedback lasers;Journal of Applied Physics;1998-12

5. Auger carrier capture kinetics in self-assembled quantum dot structures;Applied Physics Letters;1998-01-05