Thermal generation of carriers in gold‐doped silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327611
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1. Classical Device Modeling;Nano-Electronic Devices;2011
2. Metal contamination analysis of the epitaxial starting material for scientific CCDs;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2000-01
3. Pinning behavior of gold-related levels in Si usingSi1−xGexalloy layers;Physical Review B;1997-11-15
4. Properties of the Main Impurities;Metal Impurities in Silicon-Device Fabrication;1995
5. Temperature formation of the inversion layer in metal‐oxide‐semiconductor structures: Theoretical model and application to the determination of minority‐capture cross sections of the gold acceptor level in silicon;Journal of Applied Physics;1989-12-15
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