Author:
Chung H. J.,Liu J. Q.,Skowronski M.
Subject
Physics and Astronomy (miscellaneous)
Cited by
44 articles.
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1. Polytypic transformation behavior from 4H-SiC to 3C-SiC during high-speed scratching of single crystalline silicon carbide;Materials Letters;2024-02
2. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
3. Thermal Conductivity of 3C/4H-SiC Nanowires by Molecular Dynamics Simulation;Nanomaterials;2023-07-28
4. Designing silicon carbide heterostructures for quantum information science: challenges and opportunities;Materials for Quantum Technology;2022-05-23
5. Determination of site occupancy of boron in 6H–SiC by multiple-wavelength neutron holography;Applied Physics Letters;2022-03-28