Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369633
Reference44 articles.
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3. Suppression of boron penetration in p/sup +/ polysilicon gate P-MOSFETs using low-temperature gate-oxide N/sub 2/O anneal
4. Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
5. Comparison of ultrathin SiO2films grown by thermal oxidation in an N2O ambient with those in a 33% O2/N2ambient
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4. Complete prevention of reaction at HfO2/Si interfaces by 1nm silicon nitride layer;Surface Science;2008-06
5. Mechanism of Plasma Nitridation of Silicon Dioxide Employing Surface-Wave and Inductively Coupled Plasma Sources;Japanese Journal of Applied Physics;2007-08-06
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