Determination of high‐density interface state parameters in metal‐insulator‐semiconductor structures by deep‐level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337564
Reference26 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Determination of interface and bulk‐trap states of IGFET’s using deep‐level transient spectroscopy
3. Transient capacitance measurements of hole emission from interface states in MOS structures
4. Deep Level Transient Spectroscopy of Bulk Traps and Interface States in Si MOS Diodes
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