A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems-Reference-Cited by-同舟云学术

A temperature sensing based Na0.5Bi0.5TiO3 ferroelectric memristor device for artificial neural systems

Published:2024-02-26 Issue:9 Volume:124 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Zhou Lei¹,Pei Yifei¹,Li Changliang¹,He Hui¹,Liu Chao¹,Hou Yue¹,Tian Haoyuan¹,Guo Jianxin¹^ORCID,Liu Baoting¹,Yan Xiaobing¹²^ORCID

Affiliation:

1. College of Physics Science and Technology, Hebei University 1 , Baoding 071002, Hebei, China

2. Key Laboratory of Brain like Neuromorphic Devices and Systems of Hebei Province, College of Electronic Information Engineering, Hebei University 2 , Baoding 071002, Hebei, China

Abstract

With the development of artificial intelligence technology, it remains a challenge to improve the resistive switching performance of next-generation nonvolatile ferroelectric memristor device (FMD). Here, we report an epitaxial Na0.5Bi0.5TiO3 ferroelectric memristor device (NBT-FMD) with temperature sensing. The NBT epitaxial films with strong polarization strength and suitable oxygen vacancy concentration were obtained by temperature adjustment (700 °C). In addition, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated in ferroelectric memristor devices of Pt/NBT/SrRuO3 (SRO)/SrTiO3 (STO). More importantly, we have designed a neuronal circuit to confirm that NBT-FMD can serve as temperature receptors on the human skin, paving the way for bio-inspired application.

Funder

Natural ScienceFoundation of Hebei province

National Natural Science Foundation of China

Publisher

AIP Publishing

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0190861/19698845/093507_1_5.0190861.pdf

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