High-frequency rectification in graphene lateral p-n junctions
Author:
Affiliation:
1. Ioffe Institute, 194021 St. Petersburg, Russia
2. Micro and Nanoscience Laboratory, Aalto University, Tietotie 3, 02150 Espoo, Finland
3. Terahertz Center, University of Regensburg, 93040 Regensburg, Germany
Funder
Deutsche Forschungsgemeinschaft
Russian Foundation for Basic Research
Russian Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5013100
Reference35 articles.
1. Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene
2. Four-Terminal Magneto-Transport in Graphene p-n Junctions Created by Spatially Selective Doping
3. Gate dependent photocurrents at a graphene p-n junction
4. Formation of p–n junction with stable p-doping in graphene field effect transistors using deep UV irradiation
5. Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation
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1. Periodic Nanoarray of Graphene pn‐Junctions on Silicon Carbide Obtained by Hydrogen Intercalation;Advanced Functional Materials;2022-01-27
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3. Terahertz Photothermoelectric Detection Based on Three-Dimensional Microporous Graphene p-n Junction;Nonlinear Optics (NLO);2019
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