Control of Schottky barrier heights by inserting thin dielectric layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764521
Reference34 articles.
1. Fermi-level depinning for low-barrier Schottky source/drain transistors
2. A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
3. Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
4. Ohmic contact formation on n-type Ge
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