Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3116183
Reference38 articles.
1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
2. Near-band-edge photoluminescence of wurtzite-type AlN
3. Band-edge photoluminescence of AlN epilayers
4. Band structure and fundamental optical transitions in wurtzite AlN
5. Optical properties of AlN and GaN in elevated temperatures
Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy;APL Materials;2023-08-01
2. Effects of thickness and interlayer on optical properties of AlN films at room and high temperature;Journal of Vacuum Science & Technology A;2021-07
3. Influence of LO and LA phonon processes on thermal-nonequilibrium excitation and deexcitation dynamics of excitons in GaN, AlN, and ZnO;Journal of Applied Physics;2019-05-28
4. Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K;Journal of Applied Physics;2018-05-28
5. Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61 Ga0.39 N Epitaxial Layer;physica status solidi (b);2018-01-24
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3