Injected charge as a cause of the slow dielectric relaxation in thin film Pt/(Ba,Sr)TiO3/Cu structures
Author:
Funder
RFBR
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4879196
Reference39 articles.
1. Thin-film ferroelectric microwave devices
2. A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO3 thin films
3. Ferroelectrics in Microwave Devices, Circuits and Systems
4. Slow capacitance relaxation in (BaSr)TiO3 thin films due to the oxygen vacancy redistribution
5. Slow Dielectric Relaxation in SrRuO 3 /Ba 0.8 Sr 0.2 TiO 3 /SrRuO 3 Ferroelectric Thin Film Capacitor Structures
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1. Combinatorial synthesis and screening of (Ba,Sr)(Ti,Mn)O3 thin films for optimization of tunable co-planar waveguides;Journal of Materials Chemistry C;2018
2. Thermostable ferroelectric capacitors based on graded films of barium strontium titanate;Technical Physics;2017-10
3. High tunable BaSnxTi1-xO3thin films for microwave applications;Integrated Ferroelectrics;2016-06-17
4. Ferroelectric BaSrTiO3films structured by an intermediate annealing during the deposition;Integrated Ferroelectrics;2016-06-17
5. Effect of annealing in oxygen atmosphere on structure and microwave properties of multilayered tunable (Ba,Sr)TiO3 capacitors;Thin Solid Films;2015-10
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