Tuning of threshold voltage by interfacial carrier doping in organic single crystal ambipolar light-emitting transistors and their bright electroluminescence-Reference-Cited by-同舟云学术

Tuning of threshold voltage by interfacial carrier doping in organic single crystal ambipolar light-emitting transistors and their bright electroluminescence

Published:2009-09-07 Issue:10 Volume:95 Page:103307
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nakanotani Hajime,Saito Masatoshi,Nakamura Hiroaki,Adachi Chihaya

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3216047

Reference20 articles.

1. Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene

2. High Current Density in Light-Emitting Transistors of Organic Single Crystals

3. High performance light emitting transistors

4. Light amplification in polymer field effect transistor structures

5. Extremely Low-Threshold Amplified Spontaneous Emission of 9,9′-Spirobifluorene Derivatives and Electroluminescence from Field-Effect Transistor Structure

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