High-resolution elemental profiles of the silicon dioxide∕4H-silicon carbide interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1904728
Reference30 articles.
1. Particle-Packing Phenomena and Their Application in Materials Processing
2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
3. The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications
4. Power semiconductor device figure of merit for high-frequency applications
5. Status and prospects for SiC power MOSFETs
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