Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1−x)2O3 films

Published:2021-05-01 Issue:5 Volume:9 Page:051103
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Johnson Jared M.¹^ORCID,Huang Hsien-Lien¹,Wang Mengen²^ORCID,Mu Sai²^ORCID,Varley Joel B.³^ORCID,Uddin Bhuiyan A F M Anhar⁴^ORCID,Feng Zixuan⁴,Kalarickal Nidhin Kurian⁴^ORCID,Rajan Siddharth⁴,Zhao Hongping¹⁴^ORCID,Van de Walle Chris G.²^ORCID,Hwang Jinwoo¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Lawrence Livermore National Laboratory, Livermore, California 94550, USA

4. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

Air Force Office of Scientific Research

National Science Foundation

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039769

Reference44 articles.

1. Atomic-scale strain field and In atom distribution in multiple quantum wells InGaN/GaN

2. Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures

3. Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice

4. Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes

5. The influence of Al composition on point defect incorporation in AlGaN

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. First-Principle Analysis of Elastic Constants of $\beta-(\text{Al}_{\mathrm{x}}\text{Ga}_{1-\mathrm{x}})_{2}\mathrm{O}_{3}$ for Heterogeneous Interface Applications;2024 IEEE 24th International Conference on Nanotechnology (NANO);2024-07-08

2. Solid‐Solution Limits and Thorough Characterization of Bulk β‐(Al_xGa_1‐x)₂O Single Crystals Grown by the Czochralski Method;Advanced Materials Interfaces;2024-06-14

3. Si-doped (AlGa)₂O₃ growth on a-, m- and r-plane α-Al₂O₃ substrates by molecular beam epitaxy;Japanese Journal of Applied Physics;2024-05-01

4. Effect of sputtering power on the properties of Al-doped Ga2O3 thin films;Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023);2024-02-01

5. Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3;APL Materials;2024-01-01

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3