Dual referenced composite free layer design optimization for improving switching efficiency of spin-transfer torque RAM
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55414, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Low critical current for spin transfer in magnetic tunnel junctions
2. Spin transfer switching in dual MgO magnetic tunnel junctions
3. G. Hu et al., 2015 IEEE International Electron Devices Meeting (IEDM), pp. 26.3.1– 26.3.4 (2015).
4. R. Victora and X. Chen, U.S. Patent8134864 (2012).
5. Dual Referenced Composite Free Layer Design for Improved Switching Efficiency of Spin-Transfer Torque Random Access Memory
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Leveraging Transverse Reads to Correct Alignment Faults in Domain Wall Memories;2019 49th Annual IEEE/IFIP International Conference on Dependable Systems and Networks (DSN);2019-06
2. Field- and temperature-modulated spin diode effect in a GMR nanowire with dipolar coupling;Journal of Physics D: Applied Physics;2018-11-30
3. Ultra-Low Write Energy Composite Free Layer Spin–Orbit Torque MRAM;IEEE Transactions on Magnetics;2018-11
4. Interaction of two domain walls during spin-torque-induced coherent motion;Journal of Physics: Condensed Matter;2018-07-10
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