Physically sound parameterization of incomplete ionization in aluminum-doped silicon
Author:
Affiliation:
1. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany
2. Pietro P. Altermatt, Global Photovoltaic Simulation Group, Case Postale 1056, 1211 Genève 1, Switzerland
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference26 articles.
1. Adapted parameterization of incomplete ionization in aluminum-doped silicon and impact on numerical device simulation
2. A simulation model for the density of states and for incomplete ionization in crystalline silicon. I. Establishing the model in Si:P
3. A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation
4. Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
5. Low-temperature hall coefficient and conductivity in heavily doped silicon
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