Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?-Reference-Cited by-同舟云学术

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Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?

Published:2012-11-05 Issue:19 Volume:101 Page:191102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zheng C. C.,Xu S. J.,Zhang F.,Ning J. Q.,Zhao D. G.,Yang H.,Che C. M.

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4766188

Reference14 articles.

1. Nitride Semiconductors and Devices

2. The Blue Laser Diode

3. Luminescence properties of defects in GaN

4. Impurity scattering induced excitonic polariton damping and its influence on the reflectance spectra of GaN epilayers

5. Optical properties of light-hole excitons in GaN epilayers

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