Polarization effect on infrared absorption of oxygen precipitates in silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107434
Reference8 articles.
1. Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon
2. Quantitative determination of high‐temperature oxygen microprecipitates in Czochralski silicon by micro‐Fourier transform infrared spectroscopy
3. Direct evidence of oxygen precipitates in epitaxial silicon obtained by micro‐Fourier transform infrared spectroscopy
4. Infrared absorption spectra of SiO2precipitates of various shapes in silicon: calculated and experimental
5. Optical properties of thin films
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1. Vibrational Absorption of O and N Interstitial Atoms and Related Centres;Springer Series in Solid-State Sciences;2011-10-27
2. Evidence for the effect of carbon on oxygen precipitation in Czochralski silicon crystal;Journal of Applied Physics;2000-04-15
3. Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen;Materials Science and Engineering: B;2000-04
4. Infrared response of oxygen precipitates in silicon: Experimental and simulated spectra;Applied Physics Letters;1999-08-23
5. Quantitative Evaluation of Precipitated Oxygen in Silicon by Infrared Spectroscopy: Still an Open Problem;Journal of The Electrochemical Society;1998-05-01
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