Quantitative mobility spectrum analysis of AlGaN∕GaN heterostructures using variable-field hall measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2195011
Reference18 articles.
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3. Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency
4. Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors
5. Measured microwave power performance of AlGaN/GaN MODFET
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2. Magnetotransport studies of AlGaN/GaN heterostructures with two-dimensional electron gas in parallel with a three-dimensional Al-graded layer: Incorrect hole type determination;Journal of Applied Physics;2013-07-14
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