Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC-Reference-Cited by-同舟云学术

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Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC

Published:2006-05 Issue:9 Volume:99 Page:093511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zhong Z. Q.,Wu D. X.,Gong M.,Wang O.,Shi S. L.,Xu S. J.,Chen X. D.,Ling C. C.,Fung S.,Beling C. D.,Brauer G.,Anwand W.,Skorupa W.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2195014

Reference24 articles.

1. Electron-irradiation-induced deep levels in n-type 6H–SiC

2. Photoluminescence of Radiation Defects in Ion-Implanted6HSiC

3. Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide

4. Deep luminescent centres in electron-irradiated 6H SiC

5. Capture cross sections of electron irradiation induced defects in 6H–SiC

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Localized defects related to the 14N+ ion irradiation-induced magnetism in SiC;Physica E: Low-dimensional Systems and Nanostructures;2017-09

2. Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature;Applied Physics Letters;2014-01-27

3. Irradiation-induced magnetic ordering in SiC: Experimental results and a density functional study;Applied Physics Letters;2013-12-23

4. Emission related to exciton-polariton coupling in porous SiC;physica status solidi (c);2011-04-07

5. Vacancy-type defects in 6H–silicon carbide induced by He-implantation: a positron annihilation spectroscopy approach;Journal of Physics D: Applied Physics;2008-09-19

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