Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4861940
Reference20 articles.
1. Influence of buffer-layer surface morphology on the self-organized growth of InAs on InP(001) nanostructures
2. From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
3. Long-wavelength InP-based quantum-dash lasers
4. Design and realization of low density InAs quantum dots on AlGaInAs lattice matched to InP(001)
5. Effects of substrate doping and surface roughness on self-assembling InAs/InP quantum dots
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2. Telecom‐Band Quantum Dots Compatible with Silicon Photonics for Photonic Quantum Applications;Advanced Quantum Technologies;2024-02-26
3. Polarized and Bright Telecom C-Band Single-Photon Source from InP-Based Quantum Dots Coupled to Elliptical Bragg Gratings;Nano Letters;2024-01-29
4. Purcell‐Enhanced Single‐Photon Emission in the Telecom C‐Band;Advanced Quantum Technologies;2023-10-03
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