Spatial and energetic distribution of border traps in the dual-layer HfO2∕SiO2 high-k gate stack by low-frequency capacitance-voltage measurement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2364064
Reference14 articles.
1. IEEE 41st International Reliability Physics Symposium;Kerber A.,2003
2. The effects of oxide traps on the MOS capacitance
3. Tunneling to traps in insulators
4. Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs
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