Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor-Reference-Cited by-同舟云学术

Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Published:2015-11-16 Issue:20 Volume:107 Page:203507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhou Xin¹,Qiao Ming¹,He Yitao¹,Li Zhaoji¹,Zhang Bo¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China

Funder

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936161

Reference18 articles.

1. J. M. Park , M. Knaipp , H. Enichlmair , R. Minixhofer , S. Yun , and N. Feilchenfeld , in Proceedings of IEEE International Symposium Power Semiconductor Devices and IC's, Bruges, Belgium (2012), p. 189.

2. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

3. Investigation on the Initial Hot-Carrier Injection in P-LDMOS Transistors With Shallow Trench Isolation Structure

4. Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors

5. An Investigation on Anomalous Hot-Carrier-Induced On-Resistance Reduction in n-Type LDMOS Transistors

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5. Erratum: “Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor” [Appl. Phys. Lett. 107, 203507 (2015)];Applied Physics Letters;2016-02-29